MUN2211T1 |
RFQ for MUN2211T1 Required Field |
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| Technical/Catalog Information | MUN2211T1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 338mW |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transistion | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-59 |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MUN2211T1G MUN2211T1G MUN2211T1GOSDKR ND MUN2211T1GOSDKRND MUN2211T1GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MUN2211T1 | - | SOT23 | - |
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC59 package which is designed for low power surface mount applications.
Features |
| • Simplifies Circuit Design• Reduces Board Space• Reduces Component Count• The SC59 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.• Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. |
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Rating |
Symbol |
Value |
Unit |
| Collector-Base Voltage |
VCBO |
50 |
Vdc |
| Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
| Collector Current |
IC |
100 |
mAdc |
| Total Power Dissipation @ TA = 25°C(1) Derate above 25°C |
PD |
200 1.6 |
mW mW/°C |
